Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
| Autor: | C. Potier, J.C. Jacquet, L. Trinh Xuan, Philippe Bouysse, Raymond Quéré, Piero Gamarra, N. Michel, Stéphane Piotrowicz, M. Oualli, Raphaël Aubry, Sylvain Laurent, Sylvain Delage, D. Lancereau, O. Patard |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Fabrication business.industry Microwave power 020206 networking & telecommunications Normally off 02 engineering and technology Epitaxy 01 natural sciences Power (physics) Threshold voltage Etching (microfabrication) Gate oxide 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics business |
| Zdroj: | 2016 11th European Microwave Integrated Circuits Conference (EuMIC). |
| DOI: | 10.1109/eumic.2016.7777490 |
| Popis: | This paper presents the realization and characterization of normally-off recessed MOS-HEMTs on a Ka-band-dedicated AlGaN/GaN epitaxial structure. Previous HEMTs results on this structure feature an output power of 3.5 W/mm with PAE of 39 % at 30 GHz CW. Normally-off operation was achieved through the use of gate recess combined with a Al 2 O3 gate oxide, by a fabrication process compatible with that of normallyon high-frequency power HEMTs. Electrical performances include threshold voltage over 1 V, pulsed drain current in excess of 400 mA/mm and fmax of 35 GHz. Dynamic Ron transients after switching events were investigated, showing thermally-activated increase of Ron over 10 decades of time. Low-frequency output-admittance measurements were also conducted to evaluate the impact of gate recess etching on charge trapping behavior. |
| Databáze: | OpenAIRE |
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