Communication—Light-Induced Plating of Aluminum on Silicon in a Lewis Acidic Chloroaluminate Ionic Liquid
| Autor: | Wen Hsi Huang, Bowen Deng, Woo Jung Shin, Dihua Wang, Meng Tao, Laidong Wang |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
inorganic chemicals
Materials science Silicon 020209 energy chemistry.chemical_element 02 engineering and technology Substrate (electronics) complex mixtures chemistry.chemical_compound Aluminium Electrical resistivity and conductivity Plating 0202 electrical engineering electronic engineering information engineering Materials Chemistry Electrochemistry Electroplating Renewable Energy Sustainability and the Environment 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Chemical engineering Ionic liquid 0210 nano-technology Layer (electronics) |
| Zdroj: | Journal of The Electrochemical Society. 165:D381-D383 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/2.0731809jes |
| Popis: | Conventional electroplating of aluminum on silicon often requires a seed layer to overcome the high resistivity of the substrate. In this paper, light-induced plating of aluminum directly on a silicon substrate in an ionic liquid is reported. Without any seed layer, the deposited aluminum has good adhesion to the silicon surface. The resistivity of the aluminum deposits is as low as 4 × 10−6 Ω-cm, which is only about 1.5 times that of bulk aluminum. The suitable wavelength for the light source is 600 nm to 1,000 nm. The effect of plating temperature on morphology of the aluminum deposits is analyzed. |
| Databáze: | OpenAIRE |
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