Stress measurement by microRaman spectroscopy of polycrystalline silicon structures
| Autor: | Joan Ramon Morante, M.S. Benrakkad, J.M. Lopez-Villegas, M A Benitez, J. Esteve, Josep Samitier |
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| Rok vydání: | 1995 |
| Předmět: |
Chemistry
Mechanical Engineering Analytical chemistry Stress measurement Chemical vapor deposition Stress distribution engineering.material Signal Electronic Optical and Magnetic Materials Stress (mechanics) symbols.namesake Polycrystalline silicon Mechanics of Materials symbols engineering Electrical and Electronic Engineering Composite material Spectroscopy Raman spectroscopy |
| Zdroj: | Journal of Micromechanics and Microengineering. 5:132-135 |
| ISSN: | 1361-6439 0960-1317 |
| DOI: | 10.1088/0960-1317/5/2/019 |
| Popis: | In this work, microRaman spectroscopy is applied for the stress analysis of LPCVD polysilicon films deposited on SiO2 sacrificial layers. The features of the first-order Si Raman signal (shape, width and position of maximum) are analyzed taking into account the presence of structural defects and stress distribution in the layers. These measurements are correlated with the results obtained by using micromachined test structures. |
| Databáze: | OpenAIRE |
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