The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films

Autor:	I.S. Samiev, D.K. Kabilov, T.S. Kamilov, A.Z. Husanov, S. Dadamuhamedov
Rok vydání:	2005
Předmět:	Materials science Silicon business.industry chemistry.chemical_element Substrate (electronics) Epitaxy Electrical contacts Particle detector chemistry Seebeck coefficient Thermoelectric effect Optoelectronics business Layer (electronics)
Zdroj:	ICT 2005. 24th International Conference on Thermoelectrics, 2005..
DOI:	10.1109/ict.2005.1520003
Popis:	In this work it was informed about development of the thermoelectric radiation detector based on the multielement structures made of the polycrystalline higher manganese silicide films. The films were grown on a p-type silicon substrate with n-type silicon epitaxial layer with a thickness of about 30 /spl mu/m. For the purpose of decreasing short-circulating effects and thermal scattering of the substrate, the elements of the structures were separated by making grooves using mechanical cutting. Depth of the grooves is no more than 50 /spl mu/m. Electrical contacts to elements of the structure were made by ultrasonic bonding. Thermoelectric properties (conductivity, thermoelectric power, sensitivity and response time) of the multielement structures were investigated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::acfa0441920f4aa8df53965208a1e1d5 https://doi.org/10.1109/ict.2005.1520003 Zobrazit plný text záznamu