Manufacture of single electron transistors using AFM manipulation on multiwalled carbon nanotubes
| Autor: | Reeta Tarkiainen, Leif Roschier, Pertti Hakonen, M. Paalanen, M. Ahlskog |
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| Rok vydání: | 2002 |
| Předmět: |
Nanotube
Materials science business.industry Contact resistance Transistor Coulomb blockade Insulator (electricity) Nanotechnology Carbon nanotube Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Nanoelectronics law Optoelectronics Electrical and Electronic Engineering business Contact area |
| Zdroj: | Microelectronic Engineering. :687-691 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(02)00445-8 |
| Popis: | We have investigated the potential of using multiwalled carbon nanotubes for constructing low-noise single-electron transistors (SETs). In our best devices, we use free-standing structures where the carbon nanotube is positioned on top of two 20-nm thick gold leads using AFM manipulation. A rapid, 10–30-s, heat treatment at 1000 K after manipulation results in a contact resistance of 10–20 kΩ. The 1/ f -noise is minimized in these free-standing constructions owing to the missing contact area with the SiO 2 substrate insulator that contains the trapping centers of charge. The measured equivalent background charge noise is in the range 2·10 −5 –6·10 −6 e/Hz 1/2 at frequencies of 10–45 Hz. These results are equal to those obtained on the best metallic devices available at present. |
| Databáze: | OpenAIRE |
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