Modeling of the diffusion of implanted boron in strained Si/Si/sub 1-x/Ge/sub x

Autor:	Paul Ronsheim, Huilong Zhu, Kam-leung Lee, Suryanarayan G. Hegde, P. Saunders, O. Dokumaci, U. Mantz, F. Cardone
Rok vydání:	2003
Předmět:	Materials science Silicon Annealing (metallurgy) Semiconductor device modeling chemistry.chemical_element Germanium Potential energy Molecular physics Silicon-germanium chemistry.chemical_compound Crystallography chemistry Boron diffusion Boron
Zdroj:	International Conferencre on Simulation of Semiconductor Processes and Devices.
DOI:	10.1109/sispad.2002.1034557
Popis:	The diffusion of implanted boron in strained Si/Si/sub 1-x/Ge/sub x/ is investigated. A continuum segregation model (CSM) is presented to describe the phenomenon of B pile-up into the germanium profile. An analytic formula is obtained for Ge pre-amorphization and a modified pre-amorphization model is used in TSUPREM4 in order to accurately model our measurement data. Our simulations of boron diffusion are in reasonable agreement with our SIMS data. Comparison of the CSM with the model of immobile boron-germanium clusters is also discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::acf8fa79b9681b86c1b970390d257c9e https://doi.org/10.1109/sispad.2002.1034557