Enhanced deuterium diffusion in boron doped monocrystalline diamond films using bias-assisted MPCVD

Autor:	Nada Habka, Jean-Charles Arnault, Samuel Saada, Christine Mer-Calfati, Julien Barjon, François Jomard, J. Chevallier
Rok vydání:	2010
Předmět:	Monocrystalline silicon Physics Deuterium Etching (microfabrication) Material properties of diamond Analytical chemistry engineering General Physics and Astronomy Diamond Biasing Diffusion (business) engineering.material Ion source
Zdroj:	Physics Letters A. 374:3254-3257
ISSN:	0375-9601
DOI:	10.1016/j.physleta.2010.06.009
Popis:	The present study well emphasises the role of the bias voltage on the deuterium diffusion in boron doped diamond films ( [ B ] = 2 × 10 19 cm − 3 ) . A − 50 V bias voltage applied between the deuterium microwave plasma and the diamond surface is required to initiate deuterium diffusion. Increasing effective diffusion coefficients are obtained from the SIMS profiles for bias voltages up to − 80 V . Then, for bias voltages higher than − 120 V , the etching of diamond film becomes dominant.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::acf85e767b9a5831049fcf24686bd16c https://doi.org/10.1016/j.physleta.2010.06.009 Zobrazit plný text záznamu Full Text from ScienceDirect