Reaction engineering of photo-assisted chemical vapor deposition
| Autor: | Baichen Liu, Robert F. Hicks, Jennifer J. Zinck |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Chemical reaction engineering
Chemistry Photodissociation Mineralogy Substrate (electronics) Chemical vapor deposition Condensed Matter Physics Molecular physics Cadmium telluride photovoltaics Pulsed laser deposition Inorganic Chemistry Materials Chemistry Laser power scaling Dispersion (chemistry) |
| Zdroj: | Journal of Crystal Growth. 129:111-118 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(93)90440-8 |
| Popis: | In this paper “laminar-flow” and “plug-flow” models are presented for engineering photo-assisted chemical vapor deposition reactors. It is shown that the growth rate depends directly on the photodissociation rate, which in turn is proportional to the laser power and the precursor concentration. Dimensional analysis of the reactor conservation equations reveals that there are 5 key groups which characterize the process. These groups describe the dependence of the axial growth profile on the laser power, the laser beam width, the substrate to beam distance, the precursor concentration, and the axial dispersion in the reactor. The plug-flow model yields an analytical expression for the growth profile that can be used to design an illumination geometry for depositing uniformly thick films at high reactant utilization. Both models are in good agreement with experimental measurements of the photo-assisted CVD of cadmium telluride. |
| Databáze: | OpenAIRE |
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