Epitaxial regrowth of silicon implanted with argon and boron

Autor:	M. Delfino, M. D. Strathman, A. Milgram
Rok vydání:	1984
Předmět:	Materials science Argon Physics and Astronomy (miscellaneous) Silicon Annealing (metallurgy) business.industry Radiochemistry chemistry.chemical_element Recrystallization (metallurgy) Crystal growth Epitaxy Ion implantation chemistry Optoelectronics Boron business
Zdroj:	Applied Physics Letters. 44:594-596
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.94838
Popis:	The epitaxial regrowth of silicon implanted with both argon and boron is performed by isochronal furnace and cw laser annealing. Argon is found to enhance the thermal anneal threshold for boron‐silicon reordering, while itself exhibiting essentially no redistribution after annealing. Boron, by comparison, increases the solid‐phase regrowth velocity and prevents the outdiffusion of argon. Based on these findings, a methodology for forming and preserving shallow boron junctions is suggested.
Databáze:	OpenAIRE
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