Active and buffer layers of GaN HEMT: ECV profiling and 2DEG calculation

Autor:	V. I. Zubkov, G Yakovlev, Anna Solomnikova
Rok vydání:	2019
Předmět:	Materials science Gallium nitride Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology High-electron-mobility transistor Electrochemistry 01 natural sciences Buffer (optical fiber) law.invention chemistry.chemical_compound Hardware_GENERAL law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS General Materials Science Quantum well 010302 applied physics Profiling (computer programming) business.industry Mechanical Engineering Transistor Heterojunction 021001 nanoscience & nanotechnology Condensed Matter Physics chemistry Mechanics of Materials Optoelectronics 0210 nano-technology business Hardware_LOGICDESIGN
Zdroj:	Materials Research Innovations. 24:402-408
ISSN:	1433-075X 1432-8917
Popis:	Gallium nitride transistors with high electron mobility (HEMT) have been studied by means of electrochemical capacitance–voltage (ECV) technique. The capacitance–voltage characteristics at various ...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::acdb9e48d1983389633f7dc526da99c8 https://doi.org/10.1080/14328917.2019.1688559 Zobrazit plný text záznamu