Magnetoelectric GaN film bulk acoustic wave resonator
| Autor: | Dan Neculoiu, G. Stavrinidis, Alina-Cristina Bunea, George Konstantinidis, Antonis Stavrinidis, A. Kostopoulos |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Silicon business.industry 020208 electrical & electronic engineering chemistry.chemical_element 020206 networking & telecommunications Gallium nitride Magnetostriction 02 engineering and technology Substrate (electronics) Magnetic field Surface micromachining Resonator chemistry.chemical_compound chemistry Silicon nitride 0202 electrical engineering electronic engineering information engineering Optoelectronics business |
| Zdroj: | 2019 IEEE Asia-Pacific Microwave Conference (APMC). |
| Popis: | This paper presents a novel magnetoelectric GaN film bulk acoustic resonator (FBAR). The device integrates a 750 nm piezoelectric GaN layer with Molybdenum electrodes with a magnetostrictive Nickel layer, separated by 50 nm of silicon nitride. The FBAR is fabricated on a 1.2 × 1.2 mm2GaN membrane released by micromachining of a high-resistivity silicon substrate. The device was placed in a cryostat (293 K, 10−5 mBar) and measured in an external magnetic field. The magnetic influence on the amplitude of the S21 parameter at the operating frequency of 2.92 GHz showed values of 1521 ppm and 4123 ppm for an external magnetic field of 2850 Oe, in the case of out-of-plane and in-plane field orientation, respectively. |
| Databáze: | OpenAIRE |
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