| Autor: |
Yu Wu, Dongqing Hu, Johnny K. O. Sin, Xu Cheng, Baowei Kang, Xuelan You |
| Rok vydání: |
2009 |
| Předmět: |
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| Zdroj: |
2009 21st International Symposium on Power Semiconductor Devices & IC's. |
| ISSN: |
1943-653X |
| DOI: |
10.1109/ispsd.2009.5158058 |
| Popis: |
A new Internal Transparent Collector Insulated Gate Bipolar Transistor (ITC-IGBT) is proposed, and 600V ITC-IGBTs with planar gates are fabricated. The structure of the new IGBT is similar to that of PT-IGBT, but a very low carrier lifetime control layer (LCLCL) is introduced in the collector region near the p-collector/ n-buffer junction. The LCLCL is a nano vacancy layer which is induced by high dose helium irradiation and followed by annealing. The devices' I–V characteristics under room and high temperatures and turn-off time under room temperature are measured. The ITC-IGBTs' current density at zero temperature coefficient (ZTC) point is about 80A/cm2, which is much lower than the rated value (the current density correlated to rated current is normally 150–200A/cm2). For comparison, PT-IGBTs with the same structural dimensions and using electron irradiation are also fabricated. The ITC-IGBTs' trade-off between V CEsat and turn-off time is better than that of the normal PT-IGBT. For example, the t ƒ of the ITC-IGBT at V CEsat =1.6V is about 360ns, only 60% that of the PT-IGBT. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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