| Autor: |
Mohd Ariff Mat Hanafiah, M.A. Sepee, Z. Zakaria, M. Zainon, A.I.A. Rahman, A.A. Zulkefle, Zikri Abadi Baharudin |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 IEEE International Conference on Semiconductor Electronics (ICSE). |
| DOI: |
10.1109/smelec.2018.8481295 |
| Popis: |
In this study, the influence of ambient temperature on the performance of p and n types of silicon solar cells have been investigated. The PC1D modeling software is used to simulate and analyze the photovoltaic properties of both types of silicon solar cells with the total thickness is restricted to $1\mu m$ and the ambient temperature is varied from 20 to 50°C. The simulation result exhibits the n type silicon solar cell give a better performance in term of short circuit current density compared to n type silicon solar cell. Apart from that, the conversion efficiency of silicon solar cells decrease linearly to ambient temperature due to higher recombination current. The efficiency of 5.58% is achieved for both types of silicon solar cells with ambient tempearture of 20°C. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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