Novel materials for the semiconductor industry, deposited using a rapid thermal chemical vapour deposition system
| Autor: | F.H. Ruddell, B.M. Armstrong, J.H. Montgomery, David McNeill, Harold Gamble |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Materials science
Silicon business.industry Metals and Alloys chemistry.chemical_element Mineralogy Chemical vapor deposition Silane Industrial and Manufacturing Engineering Computer Science Applications chemistry.chemical_compound chemistry Rapid thermal processing Plasma-enhanced chemical vapor deposition Modeling and Simulation Ceramics and Composites Silicon carbide Optoelectronics Deposition (phase transition) Wafer business |
| Zdroj: | Journal of Materials Processing Technology. 33:481-492 |
| ISSN: | 0924-0136 |
| DOI: | 10.1016/0924-0136(92)90281-v |
| Popis: | This paper describes a custom-built rapid thermal chemical vapour deposition system developed to allow the growth of silicon and silicon carbide at low pressure and with minimal thermal budget. The reactor uses tungsten-halogen lamps to heat the single process wafer to a maximum temperature of 1080°C with a maximum rate of 250°C/s. A microwave magnetron provides gas plasma chemistry capability. Silicon layers with low oxygen contamination are produced at around 720°C and 0.07 mbar using silane. Silicon carbide is deposited at around 970°C and 10 mbar using silane/propane chemistry. Both processes incorporate a CF4 plasma clean of the wafer surface prior to deposition. Bipolar transistors produced with a silicon carbide emitter gave higher gains than standard reference devices. |
| Databáze: | OpenAIRE |
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