Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: The role of intermixing

Autor:	N.P. Barradas, E. Pereira, C. J. Deatcher, C. Liu, Eduardo Alves, Ian Watson, Sérgio Pereira, K.P. O'Donnell
Rok vydání:	2002
Předmět:	Photoluminescence Materials science Physics and Astronomy (miscellaneous) Condensed matter physics business.industry Wide-bandgap semiconductor Chemical vapor deposition Spectral line Stack (abstract data type) Optoelectronics business Spectroscopy Layer (electronics) Quantum well
Zdroj:	Applied Physics Letters. 81:2950-2952
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1513661
Popis:	We report a detailed compositional analysis of InxGa1−xN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. Depth profiles of the InN fraction, x, in the MQWs were determined from grazing incidence Rutherford backscattering spectroscopy (RBS) analysis. Simulation of the RBS spectra provides precise estimations of individual well compositions, thickness, and the extent of In/Ga intermixing. It is ascertained that intermixing, and In segregation to the GaN cap layer, strongly increase with the value of x in the wells and with the number of periods in the MQW stack. Deleterious effects of intermixing on the spectral properties are apparent when comparing the photoluminescence spectra of two MQW structures with 8 and 18 wells, grown under the same nominal conditions.
Databáze:	OpenAIRE
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