Diffusivities and Activities of S Implanted into GaAs through an As-doped a-Si:H Film
| Autor: | Masanori Sakaguchi, Hiromichi Takano, Yoshie Fujii, Haruya Mori, Kiyohito Hirai, Akira Shiomi, Masao Kumagai, Katsuhiro Yokota, Akiyoshi Chayahara |
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| Rok vydání: | 1996 |
| Předmět: |
inorganic chemicals
Electron mobility Materials science Silicon Annealing (metallurgy) Doping technology industry and agriculture General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element Mineralogy Thermal diffusivity Ion implantation chemistry Impurity Arsenic |
| Zdroj: | Japanese Journal of Applied Physics. 35:1624 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.35.1624 |
| Popis: | Sulfur (S) ions are implanted at 500 keV into GaAs through 120 nm a-Si:H films doped with arsenic atoms at a concentration of 2×1020 cm-3. The samples are annealed in Ar gas at temperatures of 700–1000°C for 15 min. The sheet carrier concentration increases with increasing implant dose and annealing temperature. The diffusivity of the S atoms decreases with increasing implant dose. Silicon (Si) atoms are also doped from the a-Si:H films into GaAs during annealing and S+ implantation. The distribution of the Si atoms becomes slightly shallower as the implant dose increases. The carrier concentrations, however, are left unchanged by Si doping. |
| Databáze: | OpenAIRE |
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