| Autor: |
Jong Ho Lee, Kwang-Dong Yoo, Joo-Hyung Kim, Nam-Joo Kim, Kyu-Ok Lee, Chang-Eun Lee, Dong Seok Kim, Jung-Joo Kim |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. |
| DOI: |
10.1109/sirf.2012.6160161 |
| Popis: |
Flicker (1/f) noise and TCR are compared for arsenic- and phosphorus-doped polysilicon in a 0.18 μm CMOS base technology. Resistors implanted with arsenic exhibit about 4 times higher noise than with phosphorus at the same dose and thermal budget. The TCR of arsenic-doped polysilicon is negative, near −1065 ppm/K, while that of phosphorus-doped resistors positive, about + 590 ppm/K. The mismatch of N-channel MOSFETs with arsenic-doped gates is about 40% lower than with phosphorus gates. The results are attributed to the difference in grain-size and dopant segregation. The difference in grain size is confirmed by TEM and SEM micrographs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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