Investigation on the structural, optical and electrical properties of ZnO-Y2O3 (YZO) thin films prepared by PLD for TCO layer applications
| Autor: | R. Rathes Kannan, S. K. Suresh Babu, P. Issac Nelson, B. Vidhya, A. Youvanidha |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Dopant Band gap business.industry Doping Oxide 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Pulsed laser deposition chemistry.chemical_compound chemistry Electrical resistivity and conductivity 0103 physical sciences Optoelectronics Thin film 0210 nano-technology business Wurtzite crystal structure |
| Zdroj: | INTERNATIONAL CONFERENCE ON INVENTIVE MATERIAL SCIENCE APPLICATIONS : ICIMA 2019. |
| ISSN: | 0094-243X |
| DOI: | 10.1063/1.5131610 |
| Popis: | Zinc Oxide is a prominent wide bandgap material with an appreciable transparency which is widely utilized in transparent conducting oxide applications. However, metal doping on ZnO reports were extensively investigated for tuning the electrical p roperties. This article is focused on pulsed laser deposition of ZnO-Y2O3 (YZO) thin films with various concentrations of Y2O3 (0-5%) as a dopant in ZnO. X-ray diffraction spectrum of the YZO thin films exhibit s the presence of hexagonal wurtzite structure with a preferential orientation along the (002) plane. M orphology aspects of the film abides with XRD results which shown a uniform distribution till 2 wt% and displayed a gain in grain growth with increasing wt% of Y2O3. The influence of Y2O3 concentration on the optical transmittance of ZnO is investigated by Uv- Vis spectroscopy. The electrical resistivity of the deposited films is in the order ∼10−4 which was on par with the earlier reports suitable for TCO applications.Zinc Oxide is a prominent wide bandgap material with an appreciable transparency which is widely utilized in transparent conducting oxide applications. However, metal doping on ZnO reports were extensively investigated for tuning the electrical p roperties. This article is focused on pulsed laser deposition of ZnO-Y2O3 (YZO) thin films with various concentrations of Y2O3 (0-5%) as a dopant in ZnO. X-ray diffraction spectrum of the YZO thin films exhibit s the presence of hexagonal wurtzite structure with a preferential orientation along the (002) plane. M orphology aspects of the film abides with XRD results which shown a uniform distribution till 2 wt% and displayed a gain in grain growth with increasing wt% of Y2O3. The influence of Y2O3 concentration on the optical transmittance of ZnO is investigated by Uv- Vis spectroscopy. The electrical resistivity of the deposited films is in the order ∼10−4 which was on par with the earlier reports suitable for TCO applications. |
| Databáze: | OpenAIRE |
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