Electrical and optical performances of InGaAs/GaAsSb superlattice short-wavelength infrared detectors
| Autor: | Li He, Jianxin Chen, Chengzhang Yu, Qingqing Xu, Chuan Jin |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Superlattice General Engineering Photodetector 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Cutoff frequency chemistry.chemical_compound Optics chemistry 0103 physical sciences Optoelectronics Quantum efficiency Diffusion current 0210 nano-technology Spectroscopy business Indium gallium arsenide Molecular beam epitaxy |
| Zdroj: | Optical Engineering. 56:057102 |
| ISSN: | 0091-3286 |
| Popis: | We report on a p-i-n photodetector based on type II InGaAs/GaAsSb SLs with a cutoff wavelength of 2.5 μm at room temperature. High quality materials were grown on an n-type (100) InP substrate by molecular beam epitaxy. Photoluminescence spectroscopy peak of the SLs around 2.5 μm and atomic steps in the atomic force microscope image were clearly observed. A device with the 100% cutoff wavelength of 2.5 μm at 293 K was fabricated. Temperature-dependent current-voltage measurements show that the diffusion current and generation-recombination current dominate at temperatures higher than 200 K while the generation-recombination current and trap-assisted tunneling current dominate at temperatures below 200 K. The optical response measurement quantum efficiency increases with reverse bias, and a diffusion length of 0.3 μm was extracted. The cause of the small diffusion length and possible approaches to improve it were briefly discussed. |
| Databáze: | OpenAIRE |
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