Rapid thermal annealing of metastable and stable Si/Si1−xGex heterojunction bipolar transistors
| Autor: | C.J. Gibbings, A.S.R. Martin, J. Whitehurst, I.R.C. Post, C.G. Tuppen, Z.A. Shafi, D.J. Godfrey, M.E. Jones, Peter Ashburn, G.R. Booker |
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| Rok vydání: | 1991 |
| Předmět: |
Materials science
Annealing (metallurgy) business.industry viruses Thermal resistance Bipolar junction transistor Doping Heterojunction Condensed Matter Physics Crystallographic defect Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Depletion region Rapid thermal processing Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Microelectronic Engineering. 15:135-138 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(91)90198-m |
| Popis: | The effect of Rapid Thermal Annealing (RTA) treatment on the base and collector currents of Si/Si 1-x Ge x HBTs is investigated. Whilst the base current is improved by high temperature annealing, probably through annealing out of point defects (reducingE/B depletion region recombination), the collector current is degraded by the out-diffusion of boron from the base, creating parasitic barriers to injection. For some devices, the E/B depletion region recombination is reduced to such an extent that the base current is dominated by neutral base recombination. |
| Databáze: | OpenAIRE |
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