Melt growth and properties of B6P crystals

Autor:	Glen A. Slack, T.F. McNelly, E.A. Taft
Rok vydání:	1983
Předmět:	Chemistry Band gap Phosphorus Diffusion Analytical chemistry chemistry.chemical_element Crystal growth General Chemistry Condensed Matter Physics Crystallography Absorptance General Materials Science Inert gas Boron Stoichiometry
Zdroj:	Journal of Physics and Chemistry of Solids. 44:1009-1013
ISSN:	0022-3697
DOI:	10.1016/0022-3697(83)90151-8
Popis:	The compound semiconductor boron subphosphide has, at low temperatures, an ideal stoichiometry of 6 boron atoms to 1 phosphorus atom. This unit cell contains Bi12P2 and has a density of 2.60 g cm 3 . It has been melted under inert gas pressure at 2120°C with very little loss of phosphorus. Data are presented on the diffusion coefficient of phosphorus, the refractive index, the band gap, and the optical absorption coefficient. Some optical data on B6As are also given.
Databáze:	OpenAIRE
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