Electron-beam–controlled deflection of near-infrared laser in semiconductor plasma
| Autor: | Y. Sakai, O. B. Williams, A. Fukasawa, A. Murokh, R. Kupfer, K. Kusche, M. Fedurin, I. Pogorelsky, M. Polyanskiy, M. Babzien, M. Palmer, J. B. Rosenzweig |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 133:143102 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/5.0146255 |
| Popis: | A timing method for experiments on the interaction of a near-infrared laser and an ultra-relativistic electron beam via a semiconductor plasma switch is experimentally validated. As an intermediate medium, a thin Si plate is excited by the energetic, intense electron beam to produce a semiconductor plasma, which in turn deflects counter-colliding laser light having 1 μm wavelength. An electron beam of sub-nC charge sufficiently induces the needed electron number density gradient of 1 × 1020 cm−3 per tens of μm length at the interaction point. Demonstration during an inverse Compton scattering experiment by a counter-colliding electron beam of 300 pC and 70 MeV with an Nd: YAG laser at a wavelength of 1 μm is reported. |
| Databáze: | OpenAIRE |
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