Comparison of Schottky barrier heights of CoSi2 formed from evaporated or crystalline Si

Autor:	M. Finetti, C. D. Lien, M.-A. Nicolet
Rok vydání:	1984
Předmět:	chemistry.chemical_classification Materials science Physics and Astronomy (miscellaneous) Annealing (metallurgy) Schottky barrier General Engineering Analytical chemistry Mineralogy General Chemistry chemistry General Materials Science Thin film Single crystal Inorganic compound
Zdroj:	Applied Physics A Solids and Surfaces. 35:47-50
ISSN:	1432-0630 0721-7250
DOI:	10.1007/bf00620299
Popis:	Three kinds of samples were used to form Co suicides by thermal annealing: firstly, a Co film of about 370 A thick, evaporated on a (100) single crystal Si (Si c /Co); secondly, an evaporated boron-containing Si (Si e (B)) layer on the top of the first sample (Si c /Co/Si e (B)). The last sample is in the Co film of the first sample we deposited a Sie(B) layer (Si c /Co/Si e (B)/Co). A laterally uniform CoSi2 layer can be formed from the second and the third samples by annealing at 450 °C. In the first sample, the CoSi2 can be formed only at temperatures above 500 °C and the disilicide is laterally less uniform than in the second and third samples. The Schottky barrier heights of the three samples derived from the forward and reverse I–V characteristics show that the barrier height is 0.01–0.02eV higher in the uniform case than in the nonuniform case.
Databáze:	OpenAIRE
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