| Autor: |
V. Grivickas, K. Gulbinas, G. Manolis, M. Kato, J. Linnros, Gabriel Ferro, Paul Siffert |
| Rok vydání: |
2010 |
| Předmět: |
|
| Zdroj: |
AIP Conference Proceedings. |
| ISSN: |
0094-243X |
| Popis: |
Residual stress and carrier lifetime variation have been measured in free‐standing n‐type 3C‐SiC wafer grown on undulated Si substrate. We identify extended regions of residual stress that lie parallel to epilayer surfaces. The opposite polarity of stress is identified toward the interface and toward the top surface. Integrated carrier lifetime has been determined by random defect density distribution which is enhanced in the areas of double‐positioning boundary defects. It is shown that carrier lifetimes are severely reduced by the presence of residual stress towards epilayer surfaces. In this way lifetime depth‐distribution can be mistakenly attributed to enhanced surface recombination. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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