High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement
Autor: | A. A. Marmalyuk, I. S. Tarasov, K. Yu. Telegin, S. A. Zorina, T. A. Nalet, D. R. Sabitov, A. V. Lyutetskiy, A. A. Padalitsa, V. V. Shamakhov, A. V. Murashova, Sergey O. Slipchenko, V. A. Simakov, Nikita A. Pikhtin, A. Yu. Leshko, A. Yu. Andreev |
---|---|
Rok vydání: | 2009 |
Předmět: |
Distributed feedback laser
Materials science Laser diode Physics::Instrumentation and Detectors business.industry Physics::Optics Heterojunction Optical power Condensed Matter Physics Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science Optics law Optoelectronics Laser power scaling business Waveguide Diode |
Zdroj: | Semiconductors. 43:519-523 |
ISSN: | 1090-6479 1063-7826 |
DOI: | 10.1134/s1063782609040216 |
Popis: | Laser diodes with a wavelength of 808 nm obtained by the MOC-hydride epitaxy in a system of the AlGaAs alloys have been studied. Parameters of the laser diodes with symmetric narrow and asymmetric wide waveguides are compared. It is shown that the maximum optical power in these laser diodes is limited by the catastrophic optical degradation of the SiO2/Si mirrors. In laser diodes with a symmetric narrow waveguide, the maximum power was 3 W, and with an asymmetric wide waveguide, it was 6 W. It is shown that it is possible to increase the maximum optical power by using the barrier Si3N4 layer introduced between the cleavage of the laser diode and SiO2/Si insulator coatings. The power of a laser diode with the barrier Si3N4 layer and with the asymmetric wide waveguide was 8.5 W. |
Databáze: | OpenAIRE |
Externí odkaz: |
načítá se...