Ion implant monitoring with thermal wave technology

Autor:	David L. Willenborg, Allan Rosencwaig, Walter Lee Smith, M.W. Taylor, Jon Opsal
Rok vydání:	1987
Předmět:	Nuclear and High Energy Physics Materials science Silicon business.industry Annealing (metallurgy) Oxide Analytical chemistry Dose profile chemistry.chemical_element Nitride Gallium arsenide Ion chemistry.chemical_compound chemistry Optoelectronics Wafer business Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 21:537-541
ISSN:	0168-583X
DOI:	10.1016/0168-583x(87)90899-8
Popis:	Thermal wave technology has led to a new means of monitoring the dose and dose uniformity of ions implanted into wafers of silicon and gallium arsenide. New monitoring characteristics made available with this technique include nondestructive real-time dose measurements on product wafers as well as test wafers without annealing or other processing, dose measurements down to the 1E10 ions/cm 2 decade and up to 1E16 ions/cm 2 , dose measurements down to 5 keV ion energy and measurement through oxide or nitride overlayers. Furthermore, postanneal measurements of dose are also available in the high-dose range of 5E14-1E16 ions/cm 2 . In this paper we present examples to illustrate these capabilities.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ac7aa30d268d9b6e6be0889d60071578 https://doi.org/10.1016/0168-583x(87)90899-8 Zobrazit plný text záznamu