Monolithic optoelectronic switch based on the integration of a GaAs/AlGaAs heterojunction bipolar transistor and a GaAs vertical-cavity surface-emitting laser
| Autor: | S.A. Chalmers, Gregory A. Vawter, Ping Zhou, Kevin L. Lear, John C. Zolper, Ronald E. Leibenguth, A.C. Adams, J. Cheng |
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| Rok vydání: | 1993 |
| Předmět: |
Materials science
business.industry Heterostructure-emitter bipolar transistor Heterojunction bipolar transistor Bipolar junction transistor Semiconductor device Optical switch Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Vertical-cavity surface-emitting laser Semiconductor laser theory Optoelectronics Electrical and Electronic Engineering business DC bias |
| Zdroj: | IEEE Photonics Technology Letters. 5:1035-1038 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/68.257183 |
| Popis: | We describe the design and the first experimental demonstration of a monolithic integrated optoelectronic switch combining a GaAs/AlGaAs heterojunction bipolar transistor (HBT) with a vertical-cavity surface-emitting laser (VCSEL). The switch has high current gain (500-700), low power dissipation (27 and 55 mW DC at optical output levels of 0.4 and 1.2 mW, respectively), and a high optical-to-electrical conversion efficiency (150 W/A) under DC bias conditions, thus providing a high-performance electrical-to-optical interface for high-speed optical interconnections. > |
| Databáze: | OpenAIRE |
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