Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors

Autor:	M. Van Rossum, Dominique Schreurs, Michel Abou-Khalil, Bart Nauwelaers, Ke Wu, R. Maciejko
Rok vydání:	1997
Předmět:	Physics Condensed matter physics Scattering Monte Carlo method Transistor General Physics and Astronomy Heterojunction Electron High-electron-mobility transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Condensed Matter::Materials Science law Quantum Voltage
Zdroj:	Journal of Applied Physics. 82:6312-6318
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.366521
Popis:	The transport properties of electrons in a heterostructure high electron mobility transistor are analyzed by considering the capture and escape phenomena as scattering events in Monte Carlo simulation. Through the variation of the equivalent charge in time, the drain current of an AlInAs/InGaAs/InP quantum-well device with planar doping is deduced for given drain and gate voltages. We studied the energy distribution of carriers in the device and we compared the results to those obtained by other quantum mechanical treatment and the classical treatment of the confinement. We demonstrated that by using our capture procedure for the quantum mechanical treatment, carriers have higher energy values than in the case of classical treatment and therefore the current values are different by an amount of 30%–40%.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ac70674623b013f3dad091d5d7892eab https://doi.org/10.1063/1.366521 Zobrazit plný text záznamu