Cadmium doping of InP grown by MOCVD
| Autor: | B. Emmerstorfer, A.J. Springthorpe, C. Blaauw |
|---|---|
| Rok vydání: | 1987 |
| Předmět: |
Cadmium
Materials science Dopant Doping Inorganic chemistry Analytical chemistry chemistry.chemical_element Partial pressure Chemical vapor deposition Condensed Matter Physics Volumetric flow rate Inorganic Chemistry chemistry.chemical_compound chemistry Materials Chemistry Metalorganic vapour phase epitaxy Trimethylindium |
| Zdroj: | Journal of Crystal Growth. 84:431-435 |
| ISSN: | 0022-0248 |
| Popis: | The use of Cd as a p-type dopant during the growth of InP by metalorganic chemical vapour deposition (MOCVD) has been investigated. Trimethylindium, phosphine and dimethylcadmium (DMCd) were used as sources of In, P and Cd, respectively. The effect of the DMCd flow rate and the reactor pressure on the InP doping level was determined. The concentration of Cd in the InP was found to be proportional to its partial pressure in the reactor and the deposition rate was independent of the total reactor pressure. These results are in agreement with theoretical considerations. Deterioration of the layer morphology was observed for depositions at low reactor pressure and high DMCd flow rate. The results demonstrate that Cd is not a suitable dopant for low pressure MOCVD for high p-type doping levels. |
| Databáze: | OpenAIRE |
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