Electric Field Engineering in Graded-Channel GaN-Based HEMTs

Autor:	Nivedhita Venkatesan, Jeong-Sun Moon, Patrick Fay
Rok vydání:	2021
Zdroj:	2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
DOI:	10.1109/bcicts50416.2021.9682456
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ac59f8e29524c9e7814d157d8a306d4d https://doi.org/10.1109/bcicts50416.2021.9682456 Zobrazit plný text záznamu