Reliability tests of electroless barriers against copper diffusion under bias-temperature stress with n- and p-type substrates
| Autor: | Makoto Yamashita, Shota Fujishima, Akiyoshi Mitsumori, Kazuyoshi Ueno |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Dielectric strength 020209 energy Diffusion General Engineering General Physics and Astronomy chemistry.chemical_element Time-dependent gate oxide breakdown 02 engineering and technology Substrate (electronics) Thermal conduction 01 natural sciences Copper Metal Stress (mechanics) chemistry visual_art 0103 physical sciences 0202 electrical engineering electronic engineering information engineering visual_art.visual_art_medium Composite material |
| Zdroj: | Japanese Journal of Applied Physics. 55:056501 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.7567/jjap.55.056501 |
| Popis: | To investigate the similarity and difference of substrate conduction type in the time-dependent dielectric breakdown (TDDB) tests for the barrier integrity against Cu diffusion under bias-temperature stress (BTS), the TDDB reliability of electroless NiB and CoWP/NiB was determined by metal oxide semiconductor (MOS) structures on n-type Si (n-Si) substrates, and the test results were compared with those using p-type Si (p-Si) substrates. The TDDB results and mechanism were observed to be qualitatively the same as Cu diffusion for both conduction types. However, the TDDB lifetime using p-Si was found to be potentially shorter because of the reverse bias conditions than that using n-Si under the forward bias conditions. |
| Databáze: | OpenAIRE |
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