Modeling and Separate Extraction of Gate-Bias- and Channel-Length-Dependent Intrinsic and Extrinsic Source–Drain Resistances in MOSFETs
| Autor: | Hagyoul Bae, Jieun Lee, Tae Wan Kim, Ja Sun Shin, Dae Hwan Kim, Jaeman Jang, Dong Myong Kim, Daeyoun Yun |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Intrinsic resistance Extraction (chemistry) Electrical engineering Electronic Optical and Magnetic Materials Drain resistance Logic gate Parasitic element MOSFET Source separation Optoelectronics Electrical and Electronic Engineering business Communication channel |
| Zdroj: | IEEE Electron Device Letters. 32:722-724 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2011.2131116 |
| Popis: | A new technique for a separate extraction of the current-path-dependent resistance (RSD0) from the contact-dependent source and drain resistances (RSe and RDe) is reported for a single MOSFET. We also report a technique for a separation of VGS-dependent source and drain resistance (RSDi) from the VGS- and Leff-dependent channel resistance (Rch) with multiple MOSFETs. We confirm the proposed techniques applied to n-channel MOSFETs with various W/L combinations and obtain RSe = 10.5 - 12.4 Ω , RDe ≅ 12.7 Ω, and RSD0 = 4.7 Ω for W = 10 μm. VGS-dependent but L-independent RSDi is extracted to be 2.8 - 4.2 Ω. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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