Roadblocks and Critical Aspects of Cleaning for Sub-65nm Technologies

Autor:	T. Q. Le, M. Kocsis, Anthony Muscat, Sonja Sioncke, L. Hall, David Hellin, Frank Holsteyns, S. Degendt, Twan Bearda, T. Kotani, M.M. Heyns, Atsuro Eitoku, Stephane Malhouitre, S. Garaud, Jim Snow, Guy Vereecke, Sophia Arnauts, Francesca Barbagini, Paul Mertens, M. Frank, K. Kenis, Martine Claes, C. Demaco, Wim Fyen, M. Lux, V. Parachiev, Harald Kraus, Rita Vos, Els Kesters, Kaidong Xu, Kurt Wostyn, K. Kim, Kenichi Sano, B. Onsia, K-t. Lee, Ronald Hoyer, J. Hoeymissen, Jens Rip
Rok vydání:	2006
Předmět:	Materials science Surface preparation Surface roughness Nanotechnology Small particles Dielectric Metal gate Surface cleaning Hafnium oxide High-κ dielectric
Zdroj:	2006 International Symposium on VLSI Technology, Systems, and Applications.
ISSN:	1930-885X
Popis:	This study will review some of the critical aspects of cleaning for sub-65 nm technologies. These issues include: surface preparation for high k dielectrics on Si and on Ge, metal gate cleaning and removal of small particles without creating damage to structures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ac4879180f47b00ac6c9954718f5e23b https://doi.org/10.1109/vtsa.2006.251095 Zobrazit plný text záznamu