P-12: 3-D TCAD Simulation for Describing Intrinsic Fluctuations in Polycrystalline Silicon Thin Film Transistors
| Autor: | Gun-Shik Kim, Seunghyun Jang, Dongjo Kim, Sung-Hwan Choi, Moon-Hyun Yoo, ByoungTaek Son |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor engineering.material 01 natural sciences law.invention Condensed Matter::Materials Science AMOLED Polycrystalline silicon law Thin-film transistor 0103 physical sciences engineering Electronic engineering Optoelectronics Grain boundary Crystallite business Voronoi diagram Diode |
| Zdroj: | SID Symposium Digest of Technical Papers. 47:1162-1164 |
| ISSN: | 0097-966X |
| Popis: | In this work, we investigate the influence of grain boundaries on the performance of polycrystalline silicon thin-film transistors (poly-Si TFTs) for high resolution active-matrix organic light-emitting diode (AMOLED) displays using Voronoi diagram. The novel 2-D Voronoi polycrystalline grain structure can show a more realistic electrical parameter variability when the channel dimension is scaled down for high-resolution display. Using a proposed method, the impact of polycrystalline granular structure controlled by crystallization process is identified. Further, we predict the effect of grain boundary-induced variations under different laser annealing process, such as Excimer Laser Annealing (ELA). |
| Databáze: | OpenAIRE |
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