PZT Based Multilayer Surface Acoustic Wave Device for High Frequency Applications
| Autor: | Ami Chand, Muhammad Zubair Aslam, Varun Jeoti, Saravanan Karuppanan |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Surface acoustic wave Mode (statistics) 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Finite element method symbols.namesake Si substrate 0103 physical sciences Wave mode symbols Optoelectronics Thin film Rayleigh scattering 0210 nano-technology business Temperature coefficient |
| Zdroj: | 2019 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO). |
| Popis: | This paper presents a study on the integration of PZT thin film on SiO 2 /Si substrate, which offers a great deal of potential in high frequency applications. A finite element method (FEM) simulation analysis of the proposed PZT/SiO 2 /Si multilayer surface acoustic wave device is performed, and two propagation modes are studied i.e. the Rayleigh and Sezawa wave mode. The proposed structure is optimized by PZT (t PZT ) and SiO 2 (t SiO2 ) layers thicknesses. The Rayleigh mode is optimized with k2=6.27% at t PZT /λ=0.4 and t SiO2 /λ=0.025 and the Sezawa mode with k2 =13.13% at t PZT /λ =0.2 and t SiO2 /λ=0.025. The temperature coefficient of frequency of the Sezawa mode is 2.7 times lower than that of the Rayleigh mode. Which makes it a more suitable choice for temperature stable high frequency and high k2 SAW devices. |
| Databáze: | OpenAIRE |
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