Argon incorporation effects on the conductivity of metal layers
| Autor: | F. Meyer, G. Gautherin, V. Stambouli, Olivier Burat, J.P. Gilles, Daniel Bouchier |
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| Rok vydání: | 1990 |
| Předmět: |
Argon
Materials science Ion beam Metals and Alloys Analytical chemistry Noble gas chemistry.chemical_element Surfaces and Interfaces Sputter deposition Tungsten Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion chemistry Sputtering Materials Chemistry Thin film Atomic physics |
| Zdroj: | Thin Solid Films. :181-188 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(05)80026-4 |
| Popis: | Almost all plasma- and ion-beam-based deposition techniques involve energetic particle bombardment of the growing film and lead to a more or less significant incorporation of noble gas. This incorporation is considered by most researchers to have a negligible effect on the electron mobility in the films. It is clearly established that the conductivity of metals is limited by oxygen contamination and, for very thin films, by the reflection of electrons on the film interfaces and on the grain boundaries. We studied tungsten films deposited by ion beam sputter deposition, with Ar+ or Xe+ energies ranging from 0.3 keV to 20 keV. We also studied silver deposited by ion-beam-assisted deposition (IAD) with Ar+ over the energy range 0.25–1 keV. The incorporation of noble gas depends on the mass and on the energy of primary ions for sputtering and on the energy and the ion:neutral flux ratio for IAD: it is found to vary between 0% to 5% and may be modified by post-deposition implantation at 45 keV. For film thicknesses above 50-100 nm, the resistivities of argon-free layers are 2.5 μΩ cm and 9 μΩ cm for silver and tungsten respectively. The incorporation of argon results in an increase in the resistivity proportional to the concentration (2.9 μΩ cm and 11 μΩ cm per percentage unit for silver and tungsten respectively), whatever the energy of the incorporated particles. In the case of tungsten, we show that the linear relation ϱ([Ar]) we determined appears as a lower limit for a lot of previously published papers when oxygen contamination is avoided |
| Databáze: | OpenAIRE |
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