Analytical averaged loss model of three-phase T-type STATCOM with virtual zero level modulation
| Autor: | Andrew Bloor, Xu Liu, Phil Mellor, Xibo Yuan, Yonglei Zhang, Kfir J. Dagan, David Drury, Jun Wang |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Engineering
Silicon business.industry 020209 energy 020208 electrical & electronic engineering chemistry.chemical_element 02 engineering and technology Insulated-gate bipolar transistor Thermal conduction Power (physics) chemistry.chemical_compound chemistry Three-phase Modulation Control theory 0202 electrical engineering electronic engineering information engineering Silicon carbide Power semiconductor device business |
| Zdroj: | 2017 IEEE Energy Conversion Congress and Exposition (ECCE). |
| DOI: | 10.1109/ecce.2017.8096897 |
| Popis: | This paper presents an analytical model to provide a rapid estimation of the steady-state averaged power loss of a T-type STATCOM with Virtual Zero level Modulation (VZM) to balance the neutral point voltage. A case study is then conducted on a 54kVA rated T-type STATCOM system to investigate the power loss distribution over power devices and variations over switching frequency. A comparison is made in the case study between Silicon IGBT and Silicon Carbide MOSFETs considering the power losses. Downscaled experimental verification is then conducted and shows good consistency with the analytical model. The loss model indicates that VZM reduces the conduction losses of the power converter, but increases the switching losses at the same time. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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