Nucleation and growth of atomically thin hexagonal boron nitride on Ni/MgO(111) by molecular beam epitaxy
| Autor: | Martin Heilmann, Michael Hanke, J. Marcelo J. Lopes, S. Nakhaie, Thilo Krause |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Grazing incidence diffraction Scanning electron microscope business.industry Wide-bandgap semiconductor Nucleation General Physics and Astronomy 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Crystal symbols.namesake 0103 physical sciences symbols Optoelectronics 0210 nano-technology Raman spectroscopy business Molecular beam epitaxy |
| Zdroj: | Journal of Applied Physics. 125:115301 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.5081806 |
| Popis: | Scalable fabrication of atomically thin hexagonal boron nitride (h-BN) films is highly important for the future implementation of this two-dimensional dielectric in various applications. In this contribution, we report on systematical growth experiments of few-layer thick h-BN, synthesized by molecular beam epitaxy (MBE), on crystalline Ni films deposited on MgO(111). The samples are studied using scanning electron microscopy, atomic force microscopy, Raman spectroscopy, and synchrotron-based grazing incidence diffraction. Growth parameters for the realization of continuous h-BN films with high structural quality are presented and discussed. Additionally, our study also aims at gaining insight into the nucleation and growth behavior of h-BN on the Ni surface, which is crucial for achieving further improvement in terms of crystal quality and thickness homogeneity of h-BN layers grown not only by MBE but also by other methods. |
| Databáze: | OpenAIRE |
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