On the Analysis of Surfaces and Interfaces by LEIS, AES and SIMS

Autor:	P. A. J. Ackermans, H. H. Brongersma, L. J. Vijgen, W. C. v.d. Vleuten, H. J. van Daal
Rok vydání:	1987
Předmět:	Auger electron spectroscopy Materials science Sputtering Final energy Doping Analytical chemistry Ion
Zdroj:	Seventh E.C. Photovoltaic Solar Energy Conference ISBN: 9789401081986
DOI:	10.1007/978-94-009-3817-5_199
Popis:	A comparison will be made of three surface analysis techniques, viz. LEIS (NODUS), SIMS and AES, applied to an As doped Si02/Si interface. The purpose is to determine the profiles of 0, Si and As across the interface. These profiles will be made while sputtering either by primary He+ ions (LEIS) or by Ar+ ions (AES and SIMS).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ac26d6b532441fc741144bb4e4d20d7c https://doi.org/10.1007/978-94-009-3817-5_199 Zobrazit plný text záznamu