Growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces prior to the formation of a wetting layer
| Autor: | B. Z. Olshanetsky, Konstantin Romanyuk, A. B. Talochkin, S.A. Teys |
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| Rok vydání: | 2004 |
| Předmět: |
Surface diffusion
Materials science Condensed matter physics Nanowire chemistry.chemical_element Germanium Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials law.invention symbols.namesake chemistry law symbols Scanning tunneling microscope Raman spectroscopy Vicinal Wetting layer |
| Zdroj: | Physics of the Solid State. 46:80-84 |
| ISSN: | 1090-6460 1063-7834 |
| DOI: | 10.1134/1.1641927 |
| Popis: | The growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces is investigated by scanning tunneling microscopy (STM). It is shown that the formation of a Ge wetting layer on the Si(111) surface at germanium deposition rates of approximately 10−3 BL/min and epitaxial temperatures of 350–500°C occurs through the island or multilayer growth mechanism. This makes it possible to prepare arrays of Ge islands with a height of 3 BL and a density of 109–1012 cm−2. The growth of Ge nanowires with a constant height and a width dependent on the Ge coverage is observed on vicinal Si(111) surfaces. It is found that the surface diffusion coefficients of Ge adatoms on the Ge(5×5) surface are severalfold larger than those on the Si(7×7) surface. The Raman spectra of optical phonons on the Si(111) surface with Ge nanoislands 3 BL in height contain a number of lines associated with the quantization of the phonon spectrum along the [111] growth direction. |
| Databáze: | OpenAIRE |
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