The characteristics of hole trapping in HfO2∕SiO2 gate dielectrics with TiN gate electrode
| Autor: | Wen Tai Lu, Po Ching Lin, Tiao Yuan Huang, Ing Jyi Huang, Ming Jui Yang, Chao-Hsin Chien, Peer Lehnen |
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| Rok vydání: | 2004 |
| Předmět: |
Condensed Matter::Quantum Gases
Materials science Physics and Astronomy (miscellaneous) business.industry Analytical chemistry chemistry.chemical_element Time-dependent gate oxide breakdown Substrate (electronics) Trapping Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science chemistry Gate oxide Electrode Optoelectronics Work function business Tin Quantum tunnelling |
| Zdroj: | Applied Physics Letters. 85:3525-3527 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1808228 |
| Popis: | The characteristics of charge trapping during constant voltage stress in an n-type metal–oxide–semiconductor capacitor with HfO2∕SiO2 gate stack and TiN gate electrode were studied. We found that the dominant charge trapping mechanism in the high-k gate stack is hole trapping rather than electron trapping. This behavior can be well described by the distributed capture cross-section model. In particular, the flatband voltage shift (ΔVfb) is mainly caused by the trap filling instead of the trap creation [Zafar et al., J. Appl. Phys. 93, 9298 (2003)]. The dominant hole trapping can be ascribed to a higher probability for hole tunneling from the substrate, compared to electron tunneling from the gate, due to a shorter tunneling path over the barrier for holes due to the work function of the TiN gate electrode. |
| Databáze: | OpenAIRE |
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