Alternative Route to Silicene Synthesis via Surface Reconstruction on h-MoSi2 Crystallites
Autor: | Ehsan Monazami, Cameron Volders, Gopalakrishnan Ramalingam, Petra Reinke |
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Rok vydání: | 2016 |
Předmět: |
Materials science
Silicon Annealing (metallurgy) Silicene Mechanical Engineering chemistry.chemical_element Bioengineering Nanotechnology 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Crystallography chemistry 0103 physical sciences Monolayer General Materials Science Crystallite 010306 general physics 0210 nano-technology Electronic band structure Surface reconstruction |
Zdroj: | Nano Letters. 17:299-307 |
ISSN: | 1530-6992 1530-6984 |
DOI: | 10.1021/acs.nanolett.6b04065 |
Popis: | Silicene is a two-dimensional material with a Dirac-type band structure and it is particularly attractive due to its potential for integration with Si-based technology. The primary focus has been to grow single silicene layers and understand how the electronic structure is affected by the substrate and the phase transition between low- and high-buckling configurations. Typically, silicene is synthesized by depositing monolayer amounts of silicon onto a heated Ag(111) surface; however, other growth substrates such as Ir(111) and ZrB2 have been studied recently. We present a novel route for silicene synthesis via a high-temperature surface reconstruction of hexagonal-MoSi2 nanocrystallites. The h-MoSi2 crystallites are formed by annealing of thin Mo-layers on Si(100)-(2 × 1) and their crystallographic orientation is controlled via an epitaxial relation with the Si-substrate. The (0001) plane of h-MoSi2 is comprised of Si-hexagons with a Mo atom residing in the center. Annealing above approximately 650 °C ca... |
Databáze: | OpenAIRE |
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