Autor:	T. J. Bukowski, D. G. Davis, Donald R. Uhlmann, Gimtong Teowee, F. S. McCarthy, K.C. McCarthy
Rok vydání:	1998
Předmět:	Materials science Gate dielectric General Chemistry Dielectric Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Biomaterials Capacitor Carbon film law Materials Chemistry Ceramics and Composites Wafer Thin film Composite material High-κ dielectric Sol-gel
Zdroj:	Journal of Sol-Gel Science and Technology. 13:895-898
ISSN:	0928-0707
DOI:	10.1023/a:1008671206691
Popis:	Sol-gel derived Y2O3 thin films have been prepared on platinum coated silicon wafers and fired to temperatures ranging from 400°C to 750°C. Multiple coats were used to obtain films up to 0.5 μm thick with an intermediate firing of 400°C between coatings. Top Pt electrodes were sputtered to form monolithic capacitors. These films exhibited a dielectric constant of 18 and a leakage current of 10−11–10−7 A/cm2, making them attractive candidates for high dielectric constant dielectric films in high density DRAMs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ac112a58577e1cef55443dc73e7d52f5 https://doi.org/10.1023/a:1008671206691 Zobrazit plný text záznamu Full text from SpringerLink