Non-Equilibium Al-Ga interdiffusion in MOCVD reactor annealed AIGaAs quantum well heterostructures
| Autor: | R. C. Barker, Louis J. Guido, T. J. Cunningham, R. N. Sacks, Theodore S. Moise, S. Seshadri, J. C. Beggy |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Fabrication
Materials science Photoluminescence Condensed matter physics Atmospheric pressure Solid-state physics business.industry Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Spectral line Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business Quantum well |
| Zdroj: | Journal of Electronic Materials. 21:33-38 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02670917 |
| Popis: | AlGaAs-GaAs quantum well heterostructures have been annealed in an atmospheric pressure MOCVD reactor under an AsH3/H2 ambient. Photoluminescence spectra show a uniform and reproducible increase in the effective quantum well band-gap. Energy shift data indicate that Al-Ga interdiffusion occurs under “non-equilibrium” conditions resulting in depth-dependent Al-Ga interdiffusion such that quantum wells close to the surface disorder less than those further away. Activation energies vary from approximately 5.1–5.2 eV for the “equilibrium” case to 3.2–3.6 eV for the “non-equilibrium” case. These results suggest that caution must be exercised in using reported activation energies to characterize Al-Ga interdiffusion for photonic device fabrication. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink