Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study
| Autor: | Suresh Sundaram, Konstantinos Pantzas, Gilles Patriarche, Abdallah Ougazzaden, Jimmy Hester, Jean-Paul Salvestrini, Tarik Moudakir, G. Orsal, Y. El Gmili, Ali Ahaitouf |
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| Rok vydání: | 2013 |
| Předmět: |
Diffraction
Photoluminescence Materials science Polymers and Plastics business.industry Relaxation (NMR) Metals and Alloys Cathodoluminescence Electronic Optical and Magnetic Materials law.invention Total thickness law Solar cell Ceramics and Composites Optoelectronics Thin film business Layer (electronics) |
| Zdroj: | Acta Materialia. 61:6587-6596 |
| ISSN: | 1359-6454 |
| Popis: | We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the latter consisting of periodic thin GaN interlayers inserted during InGaN growth. It is shown that such a structure suppresses the In concentration fluctuations and corresponding different states of strain relaxation with depth, both detrimental to solar cell applications. Measurements performed by X-ray diffraction, cathodoluminescence and photoluminescence demonstrate that this multilayer growth is a promising approach to increase both the InGaN layer total thickness and In content in InGaN epilayers. As an example, single-phase 120 nm thick InGaN with 14.3% In content is obtained and found to possess high structural quality. |
| Databáze: | OpenAIRE |
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