The effect of temperature of operation on the turn-on time delay of semiconductor lasers: full analytical and exact expression form
| Autor: | Mazen Radhe Hassan |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Auger effect
Chemistry business.industry Condensed Matter Physics Laser Electronic Optical and Magnetic Materials Semiconductor laser theory Exponential function law.invention symbols.namesake Optics Semiconductor law symbols Radiative transfer Spontaneous emission Atomic physics business Instrumentation Current density |
| Zdroj: | The European Physical Journal Applied Physics. 41:41-48 |
| ISSN: | 1286-0050 1286-0042 |
| DOI: | 10.1051/epjap:2008002 |
| Popis: | In this paper, the effect of temperature of operation on the turn-on time delay, t d , of semiconductor laser has been re-studied theoretically. We derived a full analytical and exact expression to determine t d in terms of nonradiative, radiative, Auger recombination coefficients, cavity dimensions, threshold carrier density (and in turn threshold current density), injected current and temperature of operation. The temperature dependence (TD) of t d was calculated through the TD of threshold carrier density. The TD of threshold carrier density was calculated according to the TD of cavity parameters and not by the well-known exponential Pankove relation via the use of characteristics temperature and current. A complete agreement between the values of t d calculated by our proposed model and the numerical method, was shown through the simulation results. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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