Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates

Autor:	Arthur J. Pitera, J. J. Boeckl, Minjoo L. Lee, Brian Keyes, Steven A. Ringel, C. L. Andre, Eugene A. Fitzgerald, David M. Wilt
Rok vydání:	2004
Předmět:	Electron mobility Photoluminescence Materials science Physics and Astronomy (miscellaneous) Dopant business.industry Heterojunction Carrier lifetime Electron Gallium arsenide chemistry.chemical_compound chemistry Optoelectronics Dislocation business
Zdroj:	Applied Physics Letters. 84:3447-3449
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1736318
Popis:	The minority carrier lifetime of electrons (τn) in p-type GaAs double heterostructures grown on GaAs substrates and compositionally graded Ge/Si1−xGex/Si (SiGe) substrates with varying threading dislocation densities (TDDs) were measured at room temperature using time-resolved photoluminescence. The electron lifetimes for homoepitaxial GaAs and GaAs grown on SiGe (TDD∼1×106 cm−2) with a dopant concentration of 2×1017 cm−3 were ∼21 and ∼1.5 ns, respectively. The electron lifetime measured on SiGe was substantially lower than the previously measured minority carrier hole lifetime (τp) of ∼10 ns, for n-type GaAs grown on SiGe substrates with a similar residual TDD and dopant concentration. The reduced lifetime for electrons is a consequence of their higher mobility, which yields an increased sensitivity to the presence of dislocations in GaAs grown on metamorphic buffers. The disparity in dislocation sensitivity for electron and hole recombination has significant implications for metamorphic III-V devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ac04450036cedec1da0c8b23e786dd8c https://doi.org/10.1063/1.1736318 Zobrazit plný text záznamu