High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance

Autor:	Sergey A. Blokhin, Andrey V. Babichev, Andrey G. Gladyshev, Leonid Ya. Karachinsky, Innokenty I. Novikov, Alexey A. Blokhin, Mikhail A. Bobrov, Nikolay A. Maleev, Vladislav V. Andryushkin, Dmitrii V. Denisov, Kirill O. Voropaev, Irina O. Zhumaeva, Victor M. Ustinov, Anton Yu. Egorov, Nikolay N. Ledentsov
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Condensed Matter Physics Atomic and Molecular Physics and Optics
Zdroj:	IEEE Journal of Quantum Electronics. 58:1-15
ISSN:	1558-1713 0018-9197
DOI:	10.1109/jqe.2022.3141418
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ac0172fb08c0b551ee80b6af5d48d4ea https://doi.org/10.1109/jqe.2022.3141418 Zobrazit plný text záznamu