Some transient properties of transistors

Autor: J R Tillman, H G Bassett
Rok vydání: 1953
Předmět:
Zdroj: British Journal of Applied Physics. 4:116-117
ISSN: 0508-3443
DOI: 10.1088/0508-3443/4/4/307
Popis: The build-up and decay of the collector current of point-contact transistors, in response to a rectangular pulse of emitter current, take place roughly exponentially with time, after a delay of the order of a tenth of a microsecond during which there is negligible response. If the collector current is saturated, or if the collector voltage, instead of being steadily applied, is pulsed on, during or after the pulse of emitter current, effects due to delayed carriers are strikingly noted.
Databáze: OpenAIRE