Some transient properties of transistors
Autor: | J R Tillman, H G Bassett |
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Rok vydání: | 1953 |
Předmět: | |
Zdroj: | British Journal of Applied Physics. 4:116-117 |
ISSN: | 0508-3443 |
DOI: | 10.1088/0508-3443/4/4/307 |
Popis: | The build-up and decay of the collector current of point-contact transistors, in response to a rectangular pulse of emitter current, take place roughly exponentially with time, after a delay of the order of a tenth of a microsecond during which there is negligible response. If the collector current is saturated, or if the collector voltage, instead of being steadily applied, is pulsed on, during or after the pulse of emitter current, effects due to delayed carriers are strikingly noted. |
Databáze: | OpenAIRE |
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