Effect of nitrogen ion impingement during molecular beam epitaxy growth of GaAs as a function of acceleration energy
| Autor: | Hirokazu Sanpei, Shinji Kimura, Yunosuke Makita, Youichi Nakamura, Yasuhiro Fukuzawa, Takayuki Shima |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
Photoluminescence Annealing (metallurgy) Mechanical Engineering chemistry.chemical_element Condensed Matter Physics Nitrogen Ion Condensed Matter::Materials Science symbols.namesake Ion implantation chemistry Mechanics of Materials Impurity symbols General Materials Science Atomic physics Raman scattering Molecular beam epitaxy |
| Zdroj: | Materials Science and Engineering: B. 71:192-195 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(99)00373-6 |
| Popis: | Nitrogen ions were impinged during the molecular beam epitaxial growth of GaAs at 550°C, varying its acceleration energy in the range from 100 eV to 10 keV. No photoluminescence (PL) emissions were observed in as-grown condition when ion acceleration energy becomes higher than 500 eV. After high-temperature annealing at 750°C, structural defects were removed and incorporated nitrogen atoms became optically active. PL emissions that relate to isoelectronic impurity and dilute GaAsN alloys were observed with an ion acceleration energy of 10 keV. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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